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BC846P

更新时间: 2024-09-17 01:23:39
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 148K
描述
SMD General Purpose NPN Transistors

BC846P 数据手册

 浏览型号BC846P的Datasheet PDF文件第2页 
BC846BP ... BC848BP  
BC846BP ... BC848BP  
IC  
= 100 mA  
VCEO = 30...65 V  
Ptot = 150 mW  
hFE ~ 180/290/520  
Tjmax = 150°C  
SMD General Purpose NPN Transistors  
SMD Universal-NPN-Transistoren  
Version 2018-02-15  
Typical Applications  
Signal processing,  
Typische Anwendungen  
Signalverarbeitung,  
SOT-883  
(DFN1006-3)  
Switching, Amplification  
Commercial grade 1)  
Schalten, Verstärken  
Standardausführung 1)  
0.25±0.05 0.25±0.05  
0.15±0.05  
2 3  
Features  
Besonderheiten  
Miniatur-Bauform  
Anschlüsse auf der Unterseite  
Universell anwendbar  
0.5±0.05  
0.325  
Miniature package  
Bottom side leads  
General Purpose  
1
0.65  
R
Compliant to RoHS, REACH,  
Conflict Minerals 1)  
Konform zu RoHS, REACH,  
Konfliktmineralien 1)  
V
max 0.05  
0.38±0.02  
Mechanical Data 1)  
Mechanische Daten 1)  
1.0±0.5  
Taped and reeled  
3000 / 7“  
0.01 g  
Gegurtet auf Rolle  
Type  
Code  
0.6±0.5  
Weight approx.  
Gewicht ca.  
Case material  
UL 94V-0  
260°C/10s  
MSL = 1  
Gehäusematerial  
1 = B  
2 = E  
3 = C  
Solder & assembly conditions  
Löt- und Einbaubedingungen  
Dimensions - Maße [mm]  
Type  
Code  
Recommended complementary PNP transistors  
Empfohlene komplementäre PNP-Transistoren  
BC846BP = tbd  
BC847BP = tbd  
BC848BP = tbd  
BC856BP ... BC858BP  
Maximum ratings 2)  
Grenzwerte 2)  
BC846BP BC847BP BC848BP  
Collector-Emitter-volt. – Kollektor-Emitter-Spannung  
Collector-Base-voltage – Kollektor-Basis-Spannung  
Emitter-Base-voltage – Emitter-Basis-Spannung  
Power dissipation – Verlustleistung  
B open  
E open  
C open  
VCEO  
VCBO  
VEBO  
Ptot  
65 V  
80 V  
45 V  
50 V  
30 V  
30 V  
5 V  
6 V  
150 mW 3)  
Collector current – Kollektorstrom  
DC  
IC  
100 mA  
Peak Collector current – Kollektor-Spitzenstrom  
ICM  
200 mA  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
Tj  
TS  
-55...+150°C  
-55…+150°C  
1
Please note the detailed information on our website or at the beginning of the data book  
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches  
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben  
Mounted on P.C. board with 3 mm2 copper pad at collector terminal  
2
3
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) am Kollektor-Anschluss  
© Diotec Semiconductor AG  
http://www.diotec.com/  
1
 
 
 

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