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BC846PN-E6327 PDF预览

BC846PN-E6327

更新时间: 2024-11-21 12:52:43
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
10页 853K
描述
NPN/PNP Silicon AF Transistor Arrays

BC846PN-E6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.82
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):200
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:NPN/PNP最大功率耗散 (Abs):0.25 W
子类别:BIP General Purpose Small Signal表面贴装:YES
Base Number Matches:1

BC846PN-E6327 数据手册

 浏览型号BC846PN-E6327的Datasheet PDF文件第2页浏览型号BC846PN-E6327的Datasheet PDF文件第3页浏览型号BC846PN-E6327的Datasheet PDF文件第4页浏览型号BC846PN-E6327的Datasheet PDF文件第5页浏览型号BC846PN-E6327的Datasheet PDF文件第6页浏览型号BC846PN-E6327的Datasheet PDF文件第7页 
BC846PN/UPN_BC847PN  
NPN/PNP Silicon AF Transistor Arrays  
For AF input stage and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two (galvanic) internal isolated NPN/PNP  
transistor in one package  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BC846PN  
BC846UPN  
BC847PN  
C1  
B2  
E2  
6
5
4
TR2  
TR1  
1
2
3
E1  
B1  
C2  
EHA07177  
Type  
Marking  
1Os  
1Os  
Pin Configuration  
Package  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74  
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363  
BC846PN  
BC846UPN  
BC847PN  
1Ps  
2011-10-05  
1

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