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BC846S

更新时间: 2024-11-19 02:55:15
品牌 Logo 应用领域
FS 光电二极管晶体管
页数 文件大小 规格书
6页 277K
描述
General Purpose Transistors

BC846S 数据手册

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SEMICONDUCTOR  
BC846S ~BC850S  
TECHNICAL DATA  
General Purpose Transistors  
NPN Silicon  
Moisture Sensitivity Level: 1  
ESD Rating – Human Body Model: >4000 V  
– Machine Model: >400 V  
3
2
1
MAXIMUM RATINGS  
SOT–23  
Rating  
Symbol  
Value  
Unit  
Collector–Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC846  
65  
45  
30  
BC847, BC850  
BC848, BC849  
3
COLLECTOR  
Collector–Base Voltage  
Vdc  
Vdc  
BC846  
BC847, BC850  
BC848, BC849  
80  
50  
30  
1
BASE  
Emitter–Base Voltage  
2
BC846  
BC847, BC850  
BC848, BC849  
6.0  
6.0  
5.0  
EMITTER  
Collector Current – Continuous  
I
C
100  
mAdc  
MARKING DIAGRAM  
3
xx  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
xx= Device Marking  
(See Table Below)  
Total Device Dissipation FR–5 Board  
(Note 1.)  
P
D
225  
mW  
T
= 25°C  
A
Derate above 25°C  
1.8  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient (Note 1.)  
R
556  
JA  
D
Total Device Dissipation  
Alumina Substrate (Note 2.)  
P
300  
mW  
T
= 25°C  
A
Derate above 25°C  
2.4  
mW/°C  
°C/W  
Thermal Resistance,  
Junction to Ambient (Note 2.)  
R
417  
JA  
Junction and Storage  
Temperature Range  
T , T  
J stg  
–55 to  
+150  
°C  
1. FR–5 = 1.0 x 0.75 x 0.062 in  
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.  
2008. 01. 18  
Revision No : 0  
1/6  

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