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BC846S-TP PDF预览

BC846S-TP

更新时间: 2024-11-18 13:05:51
品牌 Logo 应用领域
美微科 - MCC 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 216K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6

BC846S-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.54
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):110
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:NPN最大功率耗散 (Abs):0.2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC846S-TP 数据手册

 浏览型号BC846S-TP的Datasheet PDF文件第2页 
BC846A  
THRU  
M C C  
Micro Commercial Components  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
TM  
BC849C  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
·
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
Power Dissipation: 0.225W (Tamb=25?)(Note 1)  
Collector Current: 0.1A  
Epoxy meets UL 94 V-0 flammability rating  
Moisure Sensitivity Level 1  
NPN  
·
Plastic-Encapsulate  
Transistors  
·
Maximum Ratings  
Operating temperature : -55R to +150R  
Storage temperature : -55R to +150R  
SOT-23  
A
DEVICE MARKING  
D
C
BC846A=1A,46A; BC846B=1B,46B;  
BC847A=1E,47A; BC847B=1F,47B; BC847C=1G,47C;  
BC848A=1J,48A; BC848B=1K,48B: BC848C=1L,48C  
BC849B=49B; BC849C=49C;  
B
C
E
B
F
E
Electrical Characteristics @ 25R Unless Otherwise Specified  
Max  
Symbol  
Parameter  
Min  
Units  
OFF CHARACTERISTICS  
H
G
J
V(BR)CBO  
Collector-Base Breakdown Voltage  
Vdc  
(IC=10µAdc, IE=0)  
K
BC846  
BC847  
BC849  
---  
---  
---  
80  
50  
30  
DIMENSIONS  
BC848,  
INCHES  
MM  
V(BR)CEO  
Collector-Emitter Breakdown Voltage  
(IC=10mAdc, IB=0)  
Vdc  
DIM  
A
MIN  
MAX  
MIN  
2.80  
2.10  
1.20  
.89  
MAX  
NOTE  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
.120  
.098  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
BC846  
BC847  
---  
---  
---  
65  
45  
30  
B
C
D
E
BC848,BC849  
Collector-Emitter Breakdown Voltage  
(IE=10µAdc, IC=0)  
1.78  
.45  
V(BR)EBO  
ICBO  
Vdc  
F
---  
---  
6
0.1  
G
H
J
.013  
.89  
.100  
1.12  
.180  
.51  
Collector Cut-off Current  
BC846 (VCB=80V, IE=0)  
BC847 (VCB=50V, IE=0)  
BC848, BC849 (VCB=30V, IE=0)  
Collector Cut-off Current  
BC846 (VCE=60V, IB=0)  
BC847 (VCE=45V, IB=0)  
BC848, BC849 (VCE=30V, IB=0)  
Emitter Cut-off Current  
(VEB=5V, IC=0mA)  
µAdc  
.085  
.37  
K
Suggested Solder  
Pad Layout  
ICEO  
---  
---  
0.1  
0.1  
µAdc  
µAdc  
.031  
.800  
IEBO  
.035  
.900  
HFE(1)  
DC Current Gain(VCE=5V, IC=2mA)  
BC846A, 847A, 848A  
110  
200  
420  
---  
220  
450  
800  
0.5  
.079  
2.000  
inches  
mm  
BC846B, 847B, 848B  
,849B  
BC847C, BC848C  
,BC849C  
VCE(sat)  
VBE(sat)  
fT  
Collector-Emitter Saturation Voltage  
(IC=100mA, IB=5mA)  
Base-Emitter Saturation Voltage  
(IC=100mA, IB=5mA)  
Vdc  
Vdc  
MHz  
---  
1.1  
---  
.037  
.950  
.037  
.950  
Transition Frequency  
100  
(VCE=5V, IC=10mA, f=100MHz)  
Note 1: Transistor mounted on an FR4 printed-circuit board  
www.mccsemi.com  
1 of 2  
Revision: A  
2011/01/01  

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