Datasheet > BC846S

BC846S

更新时间： 2024-11-19 18:09:23

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
5页	649K
描述
Package / Case : SOT-363;Mounting Style : SMD/SMT;Power Rating : 0.2 W;Transistor Polarity : NPN+NPN;VCEO : 65 V;VCBO : 80 V;VEBO : 6 V;Max Collector Current : 0.1 A;DC Collector/Base Gain hfe Min : 200;DC Current Gain hFE Max : 450

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BC846S 数据手册

BC846S

DUAL TRANSISTOR(NPN+NPN)

Features

SOT-363

ꢀ This device is designed for general

purpose amplifier applications

ꢀ High Stability and High Reliability

Mechanical Data

ꢀ

SOT-363 Small Outline Plastic Package

Epoxy UL: 94V-0

Mounting Position: Any

Marking: 4Ft

Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)

Parameters

Collector-Base Voltage

Collector-Emitter Voltage

Emitter -Base Voltage

Collector Current-Continuous

Collector Power Dissipation

Junction Temperature

Symbol

VCBO

VCEO

VEBO

Value

100

Unit

200

150

Storage Temperature

Thermal resistance From junction to ambient

Tstg

RθJA

-55-+150

625

ć/W

Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified).

Limits

Typ

Unit

Parameter

Symbols

Test Condition

Min

Max

ꢀ

500

450

0.1

0.3

0.70ꢀ

0.77ꢀ

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC=10uA, IE=0

IC=1mA, IB=0

IE=10uA, IC=0

VCB=30V, IE=0

IEBO

Emitter cut-off current

VEB=5V, IC=0

DC current gain

hFE

VCE=5V, IC=2mA

IC=10mA, IB=0.5mA

IC=100mA, IB=5mA

VCE=5V, IC=2mA

VCE=5V, IC=10mA

VCE=5V, IC=20mA,f=100MHz

VCB=10V, IE=0, f=1MHz

200

VCE(sat)

Collector-emitter saturation voltage

0.58

VBE

Base -emitter voltage

Cob

Transition frequency

Collector output capacitance

200

MHz

2022-02/114

REV:O

*Pulse test: pulse width≤300us,duty cycle≤2.0%

12 3 4 5

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