是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
最大集电极电流 (IC): | 0.1 A | 最小直流电流增益 (hFE): | 200 |
最高工作温度: | 150 °C | 极性/信道类型: | NPN/PNP |
最大功率耗散 (Abs): | 0.25 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC846PNH6727 | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 2-Element, NPN and PNP, Silicon, | |
BC846PNQ62702C2537 | INFINEON |
获取价格 |
TRANSISTOR SOT363 | |
BC846-Q | NEXPERIA |
获取价格 |
65 V, 100 mA NPN general-purpose transistorsProduction | |
BC846R | NXP |
获取价格 |
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BC846R-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 65 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BC846R-TAPE-7 | NXP |
获取价格 |
暂无描述 | |
BC846S | DIOTEC |
获取价格 |
Surface mount Si-Epitaxial PlanarTransistors | |
BC846S | TYSEMI |
获取价格 |
For AF input stage and driver applications, High current gain. | |
BC846S | MCC |
获取价格 |
Dual NPN Small Signal Transistor 200mW | |
BC846S | SECOS |
获取价格 |
Plastic-Encapsulate Multi-Chip (NPN+NPN) Transistor |