Datasheet > BC846PNQ62702C2537

BC846PNQ62702C2537

更新时间： 2024-11-17 23:34:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	71K
描述
TRANSISTOR SOT363

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BC846PNQ62702C2537 数据手册

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BC 846PN

NPN/PNP Silicon AF Transistor Array

• For AF input stages and driver applications

• High current gain

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated NPN/PNP

Transistors in one package

VPS05604

Tape loading orientation

PIN Configuration

Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C

1Os Q62702-C2537 SOT-363 PNP-Transistor 4 = E 5 = B 3 = C

Type

BC 846PN

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

CEO

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

DC collector current

Peak collector current

CBO

CES

EBO

100

200

250

°C

Total power dissipation, T = 115 °C

tot

Junction temperature

150

Storage temperature

Thermal Resistance

-65...+150

stg

Junction ambient

K/W

≤275

≤140

thJA

Junction - soldering point

thJS

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu

Semiconductor Group

Sep-07-1998

1998-11-01

Semiconductor Group

12 3 4 5 6

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