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BAV199LT1 PDF预览

BAV199LT1

更新时间: 2024-01-10 08:10:06
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关
页数 文件大小 规格书
4页 70K
描述
Dual Series Switching Diode

BAV199LT1 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-346包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:1 week风险等级:0.73
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224445Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-23 09:50:43
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JEDEC-95代码:TO-236AAJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.215 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:3 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAV199LT1 数据手册

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Order this document  
by BAV199LT1/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
This switching diode has the following features:  
Low Leakage Current Applications  
Medium Speed Switching Times  
Available in 8 mm Tape and Reel  
Use BAV199LT1 to order the 7 inch/3,000 unit reel  
Use BAV199LT3 to order the 13 inch/10,000 unit reel  
3
1
2
ANODE  
1
CATHODE  
2
CASE 31808, STYLE 11  
SOT23 (TO236AB)  
3
CATHODE/ANODE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Vdc  
Reverse Voltage  
V
R
70  
Forward Current  
I
215  
500  
70  
mAdc  
mAdc  
Vdc  
F
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
V
RRM  
(1)  
Average Rectified Forward Current (averaged over any 20 ms period)  
Repetitive Peak Forward Current  
I
715  
450  
mAdc  
mAdc  
Adc  
F(AV)  
I
FRM  
Non–Repetitive Peak Forward Current t = 1.0 µs  
I
2.0  
1.0  
0.5  
FSM  
t = 1.0 ms  
t = 1.0 A  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR5 Board  
Derate above 25°C  
T
A
= 25°C  
P
D
225  
1.8  
mW  
mW/°C  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R
556  
300  
°C/W  
JA  
D
P
mW  
(2)  
Alumina Substrate  
Derate above 25°C  
T
A
= 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
JA  
T , T  
J stg  
65 to +150  
DEVICE MARKING  
BAV199LT1 = JY  
1. FR5 = 1.0  
2. Alumina = 0.4  
0.75 0.062 in.  
0.3 0.024 in. 99.5% alumina.  
Thermal Clad is a trademark of the Bergquist Company  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1997  

BAV199LT1 替代型号

型号 品牌 替代类型 描述 数据表
BAV199LT1G ONSEMI

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