Datasheet > BAV199QC-Q

BAV199QC-Q

更新时间： 2024-11-25 17:01:35

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	225K
描述
Low-leakage double diodeProduction

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BAV199QC-Q 数据手册

BAV199QC-Q

Low-leakage double diode

1 March 2024

Product data sheet

1. General description

Epitaxial, medium-speed switching, double diode in an ultra small DFN1412D-3 (SOT8009)

leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

2. Features and benefits

•

Switching time: t_rr= 0.8 μs

•

Maximum leakage current: I_R= 5 nA

Repetitive peak reverse voltage V_RRM≤ 85 V

Low capacitance C_d= 2 pF

Ultra small SMD plastic package

Low package height of 0.5 mm

Suitable for Automatic Optical Inspection (AOI) of solder joint

Smaller footprint compared to conventional leaded SMD packages

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low-leakage current applications

General-purpose switching

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

I_F

forward current

reverse voltage

reverse current

single diode loaded; T_amb= 25 °C

T_j= 25 °C

215

V_R

I_R

t_rr

V_R= 75 V; T_j= 25 °C

µs

reverse recovery time I_F= 10 mA; I_R= 10 mA; I_R(meas)= 1 mA;

R_L= 100 Ω; T_amb= 25 °C

0.8

12 3 4 5 6 7...11

中文翻译

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