Datasheet > BAV199S-Q

BAV199S-Q

更新时间： 2024-11-25 11:13:51

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	204K
描述
Low-leakage quadruple diodeProduction

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BAV199S-Q 数据手册

BAV199S-Q

Low-leakage quadruple diode

27 July 2022

Product data sheet

1. General description

High-speed quadruple switching diode, encapsulated in a SOT363 (SC-88) very small Surface-

Mounted Device (SMD) plastic package.

2. Features and benefits

•

Plastic SMD package

•

Low leakage current: typ. 3 pA

Switching time: typ. 0.8 µs

Continuous reverse voltage: max. 75 V

Repetitive peak reverse voltage: max. 85 V

Repetitive peak forward current: max. 500 mA

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low leakage current applications in surface mounted circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

215

Unit

forward current

t_p≤ 300 µs; δ ≤ 0.02; T_amb= 25 °C

V_RRM

repetitive peak reverse T_j= 25 °C

voltage

V_F

forward voltage

I_F= 50 mA; t_p≤ 300 µs; δ ≤ 0.02;

1.1

T_j= 25 °C

I_R

t_rr

reverse current

V_R= 75 V; pulsed; T_j= 25 °C

0.003

0.8

µs

reverse recovery time I_F= 10 mA; I_R= 10 mA; R_L= 100 Ω;

I_R(meas)= 1 mA; T_j= 25 °C

12 3 4 5 6 7...10

中文翻译

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