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BAV199-Q1 PDF预览

BAV199-Q1

更新时间: 2024-11-28 18:07:07
品牌 Logo 应用领域
安邦 - ANBON /
页数 文件大小 规格书
3页 2338K
描述
SOT-23

BAV199-Q1 数据手册

 浏览型号BAV199-Q1的Datasheet PDF文件第2页浏览型号BAV199-Q1的Datasheet PDF文件第3页 
BAV199-Q1  
200mW Surface Mount  
Switching Diode- 70V  
Features  
Fast speed switching.  
Package outline  
For general purpose switching application.  
High conductance.  
Silicon epitaxial planar chip.  
Lead-free parts meet RoHS requirments.  
Compliant to Halogen-free  
Suffix "-Q1" for AEC-Q101  
Mechanical data  
Epoxy:UL94-V0 rated flame retardant  
Case : Molded plastic, SOT-23  
Terminals : Solder plated, solderable per  
MIL-STD-750, Method 2026  
Mounting Position : Any  
Maximum ratings and Electrical Characteristics (AT TA=25oC unless otherwise noted)  
CONDITIONS  
VALUE  
70  
PARAMETER  
Reverse Breakdown Voltage  
Average Forward Current  
SYMBOL  
UNIT  
V
VBR  
[1]  
IFAV  
mA  
A
215  
4
Non-Repetitive Peak Forward Surge Current  
Power Dissipation  
IFSM  
PD  
Tj  
tp=1 us  
mW  
200  
Maximum JunctionTemperature  
-55 to +150  
-55 to +150  
Storage Temperature Range  
[1] Single diode loaded  
Tstg  
CONDITIONS  
MIN.  
TPY.  
MAX.  
900  
PARAMETER  
SYMBOL  
UNIT  
IF= 1mA  
IF= 10mA  
IF= 50mA  
IF= 150mA  
VR= 75V  
1000  
1100  
1250  
5
Forward Voltage  
VF  
mV  
IR  
VBR  
Cj  
Reverse Current  
nA  
V
μA  
Reverse Breakdown Voltage  
Junction Capacitance  
Reverse Recovery Time  
70  
IR= 100  
pF  
μs  
VR= 0V, f= 1MHz  
4
3
trr  
IF= IR= 10mA, Irr= 0.1IR, RL= 100Ω  
Document ID  
Issued Date  
2013/03/08  
Revised Date  
Revision  
Page.  
AS-1120043  
2021/05/16  
D
3
Page 1  

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