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BAV199QC PDF预览

BAV199QC

更新时间: 2024-11-25 17:00:59
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
10页 224K
描述
Low-leakage double diodeProduction

BAV199QC 数据手册

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BAV199QC  
Low-leakage double diode  
1 March 2024  
Product data sheet  
1. General description  
Epitaxial, medium-speed switching, double diode in an ultra small DFN1412D-3 (SOT8009)  
leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks.  
2. Features and benefits  
Switching time: trr = 0.8 μs  
Maximum leakage current: IR = 5 nA  
Repetitive peak reverse voltage VRRM ≤ 85 V  
Low capacitance Cd = 2 pF  
Ultra small SMD plastic package  
Low package height of 0.5 mm  
Suitable for Automatic Optical Inspection (AOI) of solder joint  
Smaller footprint compared to conventional leaded SMD packages  
3. Applications  
Low-leakage current applications  
General-purpose switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Per diode  
IF  
forward current  
reverse voltage  
reverse current  
single diode loaded; Tamb = 25 °C  
Tj = 25 °C  
-
-
-
-
-
215  
75  
5
mA  
V
VR  
IR  
trr  
-
VR = 75 V; Tj = 25 °C  
-
nA  
µs  
reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA;  
RL = 100 Ω; Tamb = 25 °C  
0.8  
3
 
 
 
 

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