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BAV199LT1G PDF预览

BAV199LT1G

更新时间: 2024-01-03 04:43:24
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管开关光电二极管PC
页数 文件大小 规格书
3页 52K
描述
Dual Series Switching Diode

BAV199LT1G 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-346包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:1 week风险等级:0.73
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224445Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-23 09:50:43
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JEDEC-95代码:TO-236AAJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.215 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:3 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAV199LT1G 数据手册

 浏览型号BAV199LT1G的Datasheet PDF文件第2页浏览型号BAV199LT1G的Datasheet PDF文件第3页 
BAV199LT1  
Preferred Device  
Dual Series Switching  
Diode  
Features  
Low Leakage Current Applications  
Medium Speed Switching Times  
Pb−Free Package is Available  
http://onsemi.com  
ANODE  
CATHODE  
2
1
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
70  
Unit  
Vdc  
CATHODE/ANODE  
Reverse Voltage  
Forward Current  
V
R
I
F
215  
500  
70  
mAdc  
mAdc  
Vdc  
Peak Forward Surge Current  
I
FM(surge)  
3
Repetitive Peak Reverse Voltage  
V
RRM  
1
Average Rectified Forward Current  
(Note 1)  
I
715  
mAdc  
F(AV)  
2
(Averaged Over Any 20 ms Period)  
Repetitive Peak Forward Current  
I
450  
mAdc  
Adc  
FRM  
CASE 318  
SOT−23  
STYLE 11  
Non−Repetitive Peak Forward Current  
I
FSM  
t = 1.0 ms  
t = 1.0 ms  
t = 1.0 s  
2.0  
1.0  
0.5  
THERMAL CHARACTERISTICS  
Characteristic  
MARKING DIAGRAM  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
D
FR5 Board (Note 1), T = 25°C  
225  
1.8  
mW  
mW/°C  
A
Derate above 25°C  
JY M G  
G
Thermal Resistance, Junction−to−Ambient  
R
556  
°C/W  
q
JA  
Total Device Dissipation  
Alumina Substrate (Note 2), T = 25°C  
Derate above 25°C  
P
D
300  
2.4  
mW  
mW/°C  
A
JY = Specific Device Code  
M
G
= Date Code*  
= Pb−Free Package  
Thermal Resistance, Junction−to−Ambient  
Junction and Storage Temperature  
R
417  
°C/W  
°C  
q
JA  
T , T  
J
−65 to +150  
(Note: Microdot may be in either location)  
stg  
*Date Code orientation and/or overbar may vary  
depending upon manufacturing location.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR5 = 1.0 0.75 0.062 in.  
ORDERING INFORMATION  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Device  
Package  
Shipping  
BAV199LT1  
BAV199LT1G  
SOT−23  
3000/Tape & Reel  
3000/Tape & Reel  
SOT−23  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 5  
BAV199LT1/D  
 

BAV199LT1G 替代型号

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