Datasheet > BAV199-Q

BAV199-Q

更新时间： 2023-09-03 20:36:58

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
11页	205K
描述
Low-leakage double diodeProduction

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BAV199-Q 数据手册

BAV199-Q

Low-leakage double diode

23 August 2021

Product data sheet

1. General description

Epitaxial, medium-speed switching, double diode in a small SOT23 Surface-Mounted Device

(SMD) plastic package. The diodes are connected in series.

2. Features and benefits

•

Plastic SMD package

•

Low leakage current: typ. 3 pA

Switching time: typ. 0.8 us

Continuous reverse voltage: max. 75 V

Repetitive peak reverse voltage: max. 85 V

Repetitive peak forward current: max. 500 mA.

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Low-leakage current applications in surface mounted circuits.

4. Quick reference data

Table 1. Quick reference data

Symbol

Per diode

V_R

Parameter

Conditions

Min

Typ

Max

Unit

reverse voltage

reverse current

I_R

V_R= 75 V; T_j= 150 °C

12 3 4 5 6 7...11

中文翻译

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