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BAV199LT1/D PDF预览

BAV199LT1/D

更新时间: 2024-02-21 10:08:13
品牌 Logo 应用领域
其他 - ETC 二极管开关
页数 文件大小 规格书
4页 42K
描述
Dual Series Switching Diode

BAV199LT1/D 技术参数

是否无铅:不含铅生命周期:Active
零件包装代码:SOT-346包装说明:HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
Factory Lead Time:1 week风险等级:0.73
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:224445Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT-23 (TO-236) CASE 318-08Samacsys Released Date:2015-07-23 09:50:43
Is Samacsys:N其他特性:LOW LEAKAGE CURRENT
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.25 V
JEDEC-95代码:TO-236AAJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:0.5 A元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:0.215 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
最大功率耗散:0.225 W认证状态:Not Qualified
最大重复峰值反向电压:70 V最大反向恢复时间:3 µs
子类别:Rectifier Diodes表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

BAV199LT1/D 数据手册

 浏览型号BAV199LT1/D的Datasheet PDF文件第2页浏览型号BAV199LT1/D的Datasheet PDF文件第3页浏览型号BAV199LT1/D的Datasheet PDF文件第4页 
ON Semiconductort  
Dual Series Switching Diode  
BAV199LT1  
This switching diode has the following features:  
Low Leakage Current Applications  
Medium Speed Switching Times  
ON Semiconductor Preferred Device  
Available in 8 mm Tape and Reel  
Use BAV199LT1 to order the 7 inch/3,000 unit reel  
3
Use BAV199LT3 to order the 13 inch/10,000 unit reel  
1
2
ANODE  
1
CATHODE  
2
CASE 318–08, STYLE 11  
SOT–23 (TO–236AB)  
3
CATHODE/ANODE  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
70  
Unit  
Vdc  
Reverse Voltage  
V
R
Forward Current  
I
215  
500  
70  
mAdc  
mAdc  
Vdc  
F
Peak Forward Surge Current  
Repetitive Peak Reverse Voltage  
I
FM(surge)  
V
RRM  
(1)  
Average Rectified Forward Current (averaged over any 20 ms period)  
I
715  
450  
mAdc  
mAdc  
Adc  
F(AV)  
Repetitive Peak Forward Current  
I
FRM  
Non–Repetitive Peak Forward Current t = 1.0 µs  
I
2.0  
1.0  
0.5  
FSM  
t = 1.0 ms  
t = 1.0 A  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
(1)  
Total Device Dissipation FR–5 Board T = 25°C  
Derate above 25°C  
P
D
225  
1.8  
mW  
mW/°C  
A
Thermal Resistance, Junction to Ambient  
R
556  
300  
°C/W  
q
JA  
Total Device Dissipation  
P
mW  
D
(2)  
Alumina Substrate T = 25°C  
A
Derate above 25°C  
2.4  
417  
mW/°C  
°C/W  
°C  
Thermal Resistance, Junction to Ambient  
Junction and Storage Temperature  
R
q
JA  
T , T  
–65 to +150  
J
stg  
DEVICE MARKING  
BAV199LT1 = JY  
1. FR–5 = 1.0 0.75 0.062 in.  
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.  
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.  
Semiconductor Components Industries, LLC, 2001  
1
Publication Order Number:  
March, 2001 – Rev. 2  
BAV199LT1/D  

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