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BAS40V_08 PDF预览

BAS40V_08

更新时间: 2024-09-14 08:48:27
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 117K
描述
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAS40V_08 数据手册

 浏览型号BAS40V_08的Datasheet PDF文件第2页浏览型号BAS40V_08的Datasheet PDF文件第3页 
BAS40V  
DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
Low Forward Voltage Drop  
Fast Switching  
PN Junction Guard Ring for Transient and ESD Protection  
Lead Free By Design/RoHS Compliant (Note 1)  
"Green" Device (Note 4)  
Case: SOT-563  
Case Material: Molded Plastic, "Green" Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminal Connections: See Diagram  
Terminals: Finish Matte Tin annealed over Alloy 42 leadframe.  
Solderable per MIL-STD-202, Method 208  
Marking Information: See Page 2  
Ordering Information: See Page 2  
Weight: 0.003 grams (approximate)  
C1  
NC  
A2  
A1  
NC  
C2  
Top View  
Bottom View  
Device Schematic  
Maximum Ratings @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
40  
V
Forward Continuous Current (Note 2)  
200  
600  
mA  
mA  
IFM  
Forward Surge Current (Note 2)  
@ t < 1.0s  
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
PD  
Value  
150  
Unit  
mW  
Power Dissipation (Note 2)  
Thermal Resistance, Junction to Ambient Air (Note 2)  
Operating Temperature Range  
Storage Temperature Range  
833  
°C/W  
°C  
°C  
Rθ  
TJ  
TSTG  
JA  
-55 to +125  
-65 to +150  
Electrical Characteristics @T = 25°C unless otherwise specified  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Reverse Breakdown Voltage (Note 3)  
40  
V
V(BR)R  
IR = 10μA  
tp < 300μs, IF = 1.0mA  
tp < 300μs, IF = 40mA  
tp < 300μs, VR = 30V  
VR = 0V, f =1.0MHz  
IF = IR = 10mA to IR = 1.0mA,  
RL = 100Ω  
380  
1000  
Forward Voltage  
mV  
VF  
Reverse Leakage Current (Note 3)  
Total Capacitance  
20  
4.0  
200  
5.0  
nA  
pF  
IR  
CT  
Reverse Recovery Time  
5.0  
ns  
trr  
Notes:  
1. No purposefully added lead.  
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
3. Short duration pulse test used to minimize self-heating effect.  
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 3  
www.diodes.com  
July 2008  
© Diodes Incorporated  
BAS40V  
Document number: DS30561 Rev. 4 - 2  

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