Datasheet > BAS40W

BAS40W

更新时间： 2024-09-16 14:49:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1835K
描述
SOT-323

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中文翻译

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数据手册

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BAS40W 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-323 Plastic-Encapsulate Diodes

SOT-323

BAS40W/-04/-05/-06

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage

Fast Switching

BAS40W MARKING: 43•

MARKING:

BAS40W-06 MARKING: 46

BAS40W-05 MARKING：45

BAS40W-04 MARKING：44

BAS40W

BAS40W-06

BAS40W-05

BAS40W-04

Solid dot = Green molding compound device.

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

V_RRM

V_RWM

V_R

200

150

Forward continuous current

Power dissipation

I_FM

P_D

R_θJA

T_J

℃/W

℃

Thermal resistance junction to ambient

Operating Junction Temperature Range

Storage Temperature Range

667

-40 ~ +125

-55 ~ +150

T_STG

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test conditions

I_R= 10μA

Min

Max

200

Unit

Reverse breakdown voltage

Reverse voltage leakage current

V_R=30V

I_F=1mA

380

Forward voltage

V_F

C_D

I_F=40mA

1000

Diode capacitance

Reverse recovery time

V_R=0,f=1MHz

I_rr=1mA, I_R=I_F=10mA

R_L=100Ω

t _{r r}

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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