Datasheet > BAS40W

BAS40W

更新时间： 2024-11-25 06:41:27

品牌	Logo	应用领域
SECOS		二极管
页数	文件大小	规格书
2页	241K
描述
Surface Mount Schottky Barrier Diodes

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中文翻译

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数据手册

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BAS40W 数据手册

BAS40/-04W/-05W/-06W

Surface Mount Schottky Barrier Diodes

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

SOT-323

Min

FEATURES

Dim

Max

1.800 2.200

1.150 1.350

0.800 1.000

0.300 0.400

1.200 1.400

0.000 0.100

0.100 0.250

0.350 0.500

0.590 0.720

2.000 2.400

0.280 0.420

Low Turn-on Voltage

Low Forward Voltage

Very Low Capacitance

Less Than 5.0pF @ 0V

Top View

For high speed switching application, circuit protection

MECHANICAL DATA

Case: SOT-323, Molded Plastic

Terminals: Solderable per MIL-STD-202,

Method 208

All Dimension in mm

Polarity: See Diagrams Below

Weight: 0.006 grams (approx.)

Mounting Position: Any

BAS40W Marking: 43

BAS40-04W Marking: 44

BAS40-05W Marking: 45

BAS40-06W Marking: 46

ABSOLUTE MAXIMUM RATINGS at Ta = 25°C

Parameter

Symbol

Ratings

Unit

Reverse Voltage

V_R

I_F

Forward Continuous Current

200

Single Forward Current, t≦10 ms

Thermal Resistance (Note 1)

Junction−to−Ambient (Note 2)

Forward Power Dissipation

@ T_A= 25°C

I_FSM

600

508

311

R_θJA

°C/W

325

1.8

P_F

mW / °C

Derate above 25°C

Junction, Storage Temperature

T_J, T_STG

-55 ~ +150

°C

ELECTRICAL CHARACTERISTICS (at Ta = 25°C unless otherwise specified)

Parameters

Reverse Breakdown Voltage

Reverse Current

Symbol

Min.

Max.

Unit

Test Conditions

V_(BR)R

I_R= 10 μA

I_R

V_F1

V_F2

C_TOT

t_RR

200

380

1000

5.0

V_R= 30V

I_F= 1mA

Forward Voltage

I_F= 40mA

Diode Capacitance

V_R= 0, f=1MHz

I_RR= 1 mA, I_R=I_F=10mA, R_L=100Ω

Reverse Recovery Time

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

22-Sept-2008 Rev.C

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