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BAS40W PDF预览

BAS40W

更新时间: 2024-11-04 22:50:19
品牌 Logo 应用领域
美台 - DIODES 肖特基二极管
页数 文件大小 规格书
3页 59K
描述
SURFACE MOUNT SCHOTTKY BARRIER DIODE

BAS40W 数据手册

 浏览型号BAS40W的Datasheet PDF文件第2页浏览型号BAS40W的Datasheet PDF文件第3页 
BAS40W/-04/-05/-06  
SURFACE MOUNT SCHOTTKY BARRIER DIODE  
Features  
·
·
·
·
Low Forward Voltage Drop  
Fast Switching  
Ultra-Small Surface Mount Package  
PN Junction Guard Ring for Transient and ESD  
Protection  
SOT-323  
Dim  
A
B
C
D
E
Min  
0.25  
1.15  
2.00  
Max  
0.40  
1.35  
2.20  
A
C
C
B
Mechanical Data  
0.65 Nominal  
E
B
0.30  
1.20  
1.80  
0.0  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
·
·
Case: SOT-323, Molded Plastic  
Case Material - UL Flammability Rating  
Classification 94V-0  
Moisture sensitivity: Level 1 per J-STD-020A  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagrams Below  
Marking: See Diagrams Below &Page 3  
Weight: 0.006 grams (approx.)  
G
H
G
H
J
K
J
M
·
·
K
L
0.90  
0.25  
0.10  
0°  
L
D
F
·
·
·
M
a
All Dimensions in mm  
TOP VIEW  
BAS40W Marking: K43  
BAS40W-04 Marking: K44  
BAS40W-05 Marking: K45  
BAS40W-06 Marking: K46  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
VR(RMS)  
IFM  
RMS Reverse Voltage  
28  
200  
V
mA  
mA  
mW  
°C/W  
°C  
Forward Continuous Current (Note 1)  
Non-Repetitive Peak Forward Surge Current @ t = 1.0s  
Power Dissipation (Note 1)  
IFSM  
Pd  
600  
200  
RqJA  
Tj  
Thermal Resistance Junction to Ambient Air (Note 1)  
Operating Temperature Range  
625  
-55 to +125  
-65 to +150  
TSTG  
Storage Temperature Range  
°C  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
Reverse Breakdown Voltage (Note 2)  
IR = 10mA  
40  
¾
V
mV  
mV  
IF = 1.0mA, tp < 300ms  
IF = 40mA, tp < 300ms  
380  
1000  
VF  
Forward Voltage (Note 2)  
¾
VR = 30V  
IR  
Leakage Current (Note 2)  
Total Capacitance  
¾
¾
200  
5.0  
nA  
pF  
VR = 0, f = 1.0MHz  
CT  
IF = IR = 10mA,  
Irr = 0.1 x IR, RL = 100W  
trr  
Reverse Recovery Time  
¾
5.0  
ns  
Notes:  
1. Device mounted on FR4 PC board with recommended pad layout, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration test pulse used to minimize self-heating effect.  
DS30114 Rev. 8 - 2  
1 of 3  
BAS40W/-04/-05/-06  
www.diodes.com  

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