Datasheet > BAS40V-TG-WS

BAS40V-TG-WS

更新时间： 2024-09-16 01:24:39

品牌	Logo	应用领域
威伦 - WILLAS		/
页数	文件大小	规格书
3页	452K
描述
Plastic-Encapsulate Diodes S CHOTTKY BARRIER DIODE

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数据手册

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BAS40V-TG-WS 数据手册

WILLAS

BAS40V

SOT-563 Plastic-Encapsulate Diodes

SOT-563

SCHOTTKY BARRIER DIODE

FEATURES

Low Forward Voltage Drop

Fast Switching

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

Marking: KAN

Maximum Ratings @Ta=25℃

Parameter

Symbol

Limit

Unit

Non-Repetitive Peak Reverse Voltage

DC Blocking Voltage

V_RM

V_R

I_O

Average Rectified Output Current

Power Dissipation

200

150

Thermal Resistance Junction to

Ambient

R_θ^JA

667

℃/W

T_J

-55~+125

-55~+150

Operating temperature

℃

Storage temperature range

T_STG

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

Reverse voltage leakage current

I_R= 10μA

V_R=30V

200

I_F=1mA

380

Forward voltage

V_F

C_T

t _{r r}

I_F=40mA

1000

Total capacitance

Reverse recovery time

V_R=0,f=1MHz

I_F=10mA, I_R=I_F=1mA

R_L=100Ω

2012-11

WILLAS ELECTRONIC CORP.

12 3

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