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BAS40VPT PDF预览

BAS40VPT

更新时间: 2024-11-25 06:41:27
品牌 Logo 应用领域
力勤 - CHENMKO 肖特基二极管
页数 文件大小 规格书
2页 83K
描述
SCHOTTKY DIODE VOLTAGE 40 Volts CURRENT 0.2 Ampere

BAS40VPT 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.84
Base Number Matches:1

BAS40VPT 数据手册

 浏览型号BAS40VPT的Datasheet PDF文件第2页 
CHENMKO ENTERPRISE CO.,LTD  
BAS40VPT  
SURFACE MOUNT  
SCHOTTKY DIODE  
VOLTAGE 40 Volts CURRENT 0.2 Ampere  
APPLICATION  
* Ultra high speed switching  
FEATURE  
* Small surface mounting type. (SOT-563)  
* High speed. (TRR=2.5nSec Typ.)  
* Suitable for high packing density.  
* Maximum total power disspation is 150mW.  
SOT-563  
(1)  
(4)  
CONSTRUCTION  
0.50  
0.50  
1.0±0.1  
1.6±0.1  
* Silicon epitaxial planar  
(3)  
(2)  
0.05  
0.25±  
0.1  
MARKING  
1.20±  
0.1  
* 2V  
0.55±0.05  
0.14±0.04  
0.1  
(4)  
(1)  
(3)  
(2)  
CIRCUIT  
1.6±  
0.05  
SOT-563  
Dimensions in millimeters  
RATINGS  
SYMBOL  
BAS40VPT  
UNITS  
Volts  
Volts  
Volts  
Amps  
Amps  
pF  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
IO  
40  
28  
Maximum DC Blocking Voltage  
40  
Maximum Average Forward Rectified Current  
Peak Forward Surge Current at 1Sec.  
0.2  
0.6  
5.0  
5.0  
IFSM  
Typical Junction Capacitance between Terminal (Note 1)  
Maximum Reverse Recovery Time (Note 2)  
Maximum Operating Temperature Range  
CJ  
TRR  
TJ  
nSec  
oC  
-55 to +125  
-65 to +150  
oC  
Storage Temperature Range  
TSTG  
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )  
CHARACTERISTICS  
Maximum Instantaneous Forward Voltage  
Maximum Average Reverse Current at VR= 30V  
SYMBOL  
BAS40VPT  
380  
UNITS  
mVolts  
@IF= 1.0mA  
@IF= 40mA  
VF  
IR  
1000  
200  
nAmps  
2004-07  
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0.0 volts.  
2. Measured at applied froward current of 10mA and reverse current of 10mA.  
3. ESD sensitive product handling required.  

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