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BAS40W PDF预览

BAS40W

更新时间: 2024-11-25 12:20:35
品牌 Logo 应用领域
金誉半导体 - HTSEMI 肖特基二极管
页数 文件大小 规格书
2页 364K
描述
SCHOTTKY DIODE

BAS40W 数据手册

 浏览型号BAS40W的Datasheet PDF文件第2页 
BAS40W/-04/-05/-06  
SOT-323  
SCHOTTKY DIODE  
FEATURES  
z
Low Forward Voltage  
Fast Switching  
z
BAS40W MARKING: 43•  
BAS40W-06 MARKING: 46  
BAS40W-05 MARKING45  
BAS40W-04 MARKING44  
Maximum Ratings @TA=25  
Parameter  
Symbol  
Limits  
Unit  
Peak repetitive peak reverse voltage  
Working peak reverse voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
40  
V
200  
150  
Forward continuous Current  
IFM  
mA  
Power Dissipation  
PD  
RθJA  
TJ  
mW  
/W  
Thermal Resistance. Junction to Ambient Air  
Junction temperature  
833  
125  
Storage temperature range  
TSTG  
-65-125  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
V(BR)  
IR  
Test conditions  
IR= 10μA  
MIN  
40  
MAX  
200  
UNIT  
V
Reverse breakdown voltage  
Reverse voltage leakage current  
VR=30V  
nA  
IF=1mA  
380  
Forward voltage  
VF  
CD  
t r r  
mV  
pF  
nS  
IF=40mA  
1000  
Diode capacitance  
Reverse Recovery time  
VR=0,f=1MHz  
5
Irr=1mA, IR=IF=10mA  
5
RL=100  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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