Datasheet > BAS30LS-Q

BAS30LS-Q

更新时间： 2024-11-02 11:11:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
10页	223K
描述
High-speed switching diodeProduction

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BAS30LS-Q 数据手册

BAS30LS-Q

High-speed switching diode

3 November 2021

Product data sheet

1. General description

High-speed switching diode, encapsulated in a leadless ultra small DFN1006BD-2 (SOD882BD)

Surface-Mounted Device (SMD) plastic package with side-wettable flanks.

2. Features and benefits

•

High switching speed: t_rr≤ 50 ns

•

Low leakage current

High reverse voltage V_R≤ 300 V

Low capacitance: C_d≤ 2 pF

Ultra small and leadless SMD plastic package

Suitable for Automatic Optical Inspection (AOI) of solder joint

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-speed switching

General-purpose switching

Voltage clamping

Reverse polarity protection

4. Quick reference data

Table 1. Quick reference data

Symbol

I_F

Parameter

Conditions

Min

Typ

Max

250

300

Unit

forward current

reverse voltage

T_j= 25 °C

[1]

V_R

V_RRM

repetitive peak reverse

voltage

I_R

t_rr

reverse current

V_R= 250 V; T_j= 25 °C

150

reverse recovery time I_F= 30 mA; I_R= 30 mA; R_L= 100 Ω;

I_R(meas)= 3 mA; T_amb= 25 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 70 µm copper, tin-plated and standard footprint.

12 3 4 5 6 7...10

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