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BAS31_D87Z PDF预览

BAS31_D87Z

更新时间: 2024-12-01 14:50:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
2页 27K
描述
Rectifier Diode, 2 Element, 0.2A, 120V V(RRM), Silicon, SOT-23, 3 PIN

BAS31_D87Z 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:7.17
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.84 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:3 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:120 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30Base Number Matches:1

BAS31_D87Z 数据手册

 浏览型号BAS31_D87Z的Datasheet PDF文件第2页 
BAS31  
Connection Diagram  
3
3
3
L21  
2
1
2
1
1
2
SOT-23  
Small Signal Diode  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
120  
200  
V
Average Rectified Forward Current  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
2.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
°C  
Tstg  
TJ  
Operating Junction Temperature  
150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
350  
357  
mW  
RθJA  
°C/W  
Electrical Characteristics TA = 25°C unless otherwise noted  
Test Conditions  
Min  
Symbol  
Parameter  
Max  
Units  
VR  
VF  
Breakdown Voltage  
V
IR = 1.0 mA  
120  
Forward Voltage  
IF = 10 mA  
IF = 50 mA  
IF = 100 mA  
IF = 200 mA  
IF = 400 mA  
VR = 90 V  
750  
840  
900  
1.0  
1.25  
100  
100  
35  
mV  
mV  
mV  
V
V
IR  
Reverse Current  
nA  
µA  
pF  
VR = 90 V, TA = 150°C  
CT  
trr  
Total Capacitance  
VR = 0, f = 1.0 MHz  
Reverse Recovery Time  
IF = IR = 30 mA, IRR = 3.0 mA,  
50  
ns  
R = 100  
L
BAS31, Rev.  
C
2001 Fairchild Semiconductor Corporation  

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