Datasheet > BAS316

BAS316

更新时间： 2024-12-02 14:56:55

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	207K
描述
100 V/0.25 A Switching diode, SOD-323(USC)

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BAS316 数据手册

BAS316

Switching Diodes Silicon Epitaxial Planar

BAS316

1. Applications

•

High-Speed Switching

2. Packaging and Internal Circuit

1: Cathode

2: Anode

USC

3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )

Characteristics

Peak reverse voltage

Symbol

Note

Rating

Unit

VRM

100

Reverse voltage

Peak forward current

IFM

500

Average rectified current

Non-repetitive peak forward surge current

Power dissipation

250

IFSM

(Note 1)

(Note 2)



230

Junction temperature

Storage temperature

150

Tstg

-55 to 150

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Measured with a 10 ms pulse.

Note 2: Mounted on an FR4 board (20 mm × 20 mm, Cu pad: 4 mm × 4 mm)

Start of commercial production

2016-08

2016-10-20

Rev.1.0

12 3 4 5

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