Datasheet > BAS316WS

BAS316WS

更新时间： 2024-10-01 18:06:23

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
3页	258K
描述
Reverse Voltage Vr : 75 V;Forward Current Io : 250 mA;Max Surge Current : 4.0 A;Forward Voltage Vf : 1.25 V;Reverse Current Ir : 1 uA;Recovery Time : 4 ns;Package / Case : SOD-323;Mounting Style : SMT/SMD;Certified (AEC-Q101...etc) : AEC-Q101

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中文翻译

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数据手册

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BAS316WS 数据手册

BAS316WSV

250mW SOD-323 Fast Switching Diode

Features

SOD-323

z 4.0nS; Fast Switching Device (TRR <4.0 nS)

z 250mW; Power Dissipation of 250mW

z High Stability and High Reliability

z Low reverse leakage

P/N suffix V means AEC-Q101 qualified, eg:BAS316WSV

z P/N suffix V means Halogen-free

Mechanical Data

MARKING: A6

z SOD-323 Small Outline Plastic Package

z Polarity: Color band denotes cathode end

z Mounting Position: Any

Maximum Ratings & Thermal Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified.)

Parameters

Symbol

V^R

Value

Unit

Reverse Voltage

Peak Repetitive Reverse Voltage

Power Dissipation

V^RRM

250

℃

Operating junction temperature

Storage temperature range

Thermal Resistance from Junction to Ambient

Average Rectified Current

150

-55-+150

500

℃

R¸ JA

I^O

℃/W

250

Peak Forward Surge Current @tp=1us; TA=25℃

I^FSM

4.0

Valid provided that electrodes are kept at ambient temperature.

Electrical Characteristics (^{Ratings at 25℃ ambient temperature unless otherwise specified).}

Limits

Symbols

V(BR)

Parameter

Test Condition

Unit

Min

Max

Reverse Voltage

IR=100uA

100

VR=25V

VR=75

---

Reverse Leakage Current

Forward Voltage

IF=1.0mA

IF=10mA

0.715

0.855

1.00

IF=50mA

IF=150mA

IF= IR=10mA

RL=100&

IRR=0.1 X IR

1.25

TRR

Reverse Recovery Time

Capacitance

---

VR=0V, f=1MHZ

1.5

2018-04

REV C

12 3

中文翻译

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