BAS316

更新时间： 2024-11-01 08:48:23

品牌	Logo	应用领域
美微科 - MCC		二极管开关
页数	文件大小	规格书
4页	386K
描述
High Speed Switching Diode 400mW

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数据手册
替代型号

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BAS316 数据手册

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BAS316

Micro Commercial Components

Features

High Speed

Switching Diode

400mW

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Surface Mount Package Ideally Suited for Automatic Insertion

High switching speed: max. 4ns

Continuous reverse voltage: max. 100V

Repetitive peak reverse voltage: max. 100V

Repetitive peak forward current: max. 500mA

SOD-323

Mechanical Data

Marking: A6

Polarity: Indicated by Cathode Band

Maximum Ratings @ 25°C Unless Otherwise Specified

Parameter

Symbol

Limits

Unit

100

DC Reverse Voltage

V_R

Forward Current

I_F

250

℃

400

Total Device Dissipation

Junction and Storage temperature

P_D

T_j，P_stg

-65~+150

DIMENSIONS

Non-repetitive peak forward current

DIM

INCHES

MIN

NOTE

I_FSM

t=1us

t=1ms

t=1s

MAX

.107

.071

.053

.045

.016

.018

.010

.006

MIN

2.30

1.60

1.15

0.80

0.25

0.10

-----

MAX

2.70

1.80

1.35

1.15

0.40

0.45

0.25

0.15

0.5

.090

.063

.045

.031

.010

.004

-----

Electrical Characteristics @ 25°C Unless Otherwise Specified

Parameter

Symbol Test Conditons MIN MAX UNIT

100

…

715

855

1000

1250

0.03

Reverse breakdown voltage

V_BR

I_R=100uA

I_F=1mA

I_F=10mA

I_F=50mA

I_F=150mA

V_R=25V

V_R=75V

V_F

Forward voltage

SUGGESTED SOLDER

PAD LAYOUT

0.074"

I_R

Reverse leakage current

Reverse recovery time

0.027”

I_F=I_R=10mAdc,

T_rr

…

R_L=100Ω

capacitance

C_D

Diode

1.5

V =0V,f =1MHz

0.022”

www.mccsemi.com

1 of 4

Revision: B

2011/04/20

12 3 4

中文翻译

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BAS316 替代型号

型号	品牌	替代类型	描述	数据表
1SS352(TPH3,F)	TOSHIBA	功能相似	DIODE 0.1 A, 85 V, SILICON, SIGNAL DIODE, USC, 1-1E1A, 2 PIN, Signal Diode

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