BAS31

更新时间： 2024-01-17 12:58:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		二极管光电二极管高压
页数	文件大小	规格书
2页	37K
描述
High Voltage General Purpose Diode

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中文翻译

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数据手册
替代型号

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BAS31 数据手册

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Tech n ologies

BAS31

CONNECTION DIAGRAM

L21

SOT-23

High Voltage General Purpose Diode

Sourced from Process 1H. See BAV19 / 20 / 21 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

W_IV

Working Inverse Voltage

Average Rectified Current

DC Forward Current

I_O

200

600

700

I_F

Recurrent Peak Forward Current

i_f

Peak Forward Surge Current

Pulse width = 1.0 second

Pulse width = 1.0 microsecond

Storage Temperature Range

i_f(surge)

1.0

2.0

-50 to +150

°C

T_stg

T_J

Operating Junction Temperature

150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

BAS31

P_D

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction to Ambient

350

2.8

357

mW/°C

°C/W

R_θ

1997 Fairchild Semiconductor Corporation

中文翻译

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BAS31 替代型号

型号	品牌	替代类型	描述	数据表
BAS31	DIOTEC	功能相似	Surface Mount Small Signal Dual Diodes

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