Datasheet > 存储 > SRAM> AS6VA25616

AS6VA25616

更新时间： 2024-10-27 23:13:55

品牌	Logo	应用领域
ALSC		静态存储器
页数	文件大小	规格书
9页	175K
描述
2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

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数据手册

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AS6VA25616 数据手册

AS6VA25616

Write cycle (over the operating range)¹¹

Parameter

Symbol

Min

Max

–

Unit

Notes

Write cycle time

Chip select to write end

Address setup to write end

Address setup time

–

Write pulse width

–

Address hold from end of write

Data valid to write end

–

Data hold time

–

4, 5

Write enable to output in high Z

Output active from write end

UB/LB low to end of write

Shaded areas indicate preliminary information.

–

Write waveform 1 (WE controlled)^10,11

t_WC

Address

t_AH

t_CW

t_BW

t_AW

LB, UB

t_AS

t_WP

t_DW

t_DH

Data valid

D_IN

t_WZ

t_OW

D_OUT

Data undefined

High Z

Write waveform 2 (CS controlled)^10,11

t_WC

Address

t_AS

t_AH

t_CW

t_AW

t_BW

LB, UB

t_WP

t_DW

t_DH

Data valid

High Z

D_IN

t_CLZ

t_WZ

Data undefined

t_OW

D_OUT

High Z

10/6/00

ALLIANCE SEMICONDUCTOR

1 2 3 456 7 8 9

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与AS6VA25616相关器件

型号	品牌	获取价格	描述	数据表
AS6VA25616-55TC	ALSC	获取价格	Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
AS6VA25616-BC	ALSC	获取价格	2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
AS6VA25616-BI	ALSC	获取价格	2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
AS6VA25616-TC	ALSC	获取价格	2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
AS6VA25616-TI	ALSC	获取价格	2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable
AS6VA5128	ETC	获取价格	2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
AS6VA5128-BC	ETC	获取价格	2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
AS6VA5128-BI	ETC	获取价格	2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM
AS6VA5128-HFC	ALSC	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, TSOP2-32
AS6VA5128-HFI	ALSC	获取价格	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, TSOP2-32