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AS6WA25616-55BI PDF预览

AS6WA25616-55BI

更新时间: 2024-01-09 12:56:20
品牌 Logo 应用领域
ALSC 静态存储器内存集成电路
页数 文件大小 规格书
9页 138K
描述
Standard SRAM, 256KX16, 55ns, CMOS, PBGA48, CSP, FBGA-48

AS6WA25616-55BI 技术参数

生命周期:Obsolete零件包装代码:BGA
包装说明:TFBGA,针数:48
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
Is Samacsys:N最长访问时间:55 ns
JESD-30 代码:R-PBGA-B48长度:11 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:256KX16封装主体材料:PLASTIC/EPOXY
封装代码:TFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM宽度:7 mm
Base Number Matches:1

AS6WA25616-55BI 数据手册

 浏览型号AS6WA25616-55BI的Datasheet PDF文件第2页浏览型号AS6WA25616-55BI的Datasheet PDF文件第3页浏览型号AS6WA25616-55BI的Datasheet PDF文件第4页浏览型号AS6WA25616-55BI的Datasheet PDF文件第5页浏览型号AS6WA25616-55BI的Datasheet PDF文件第6页浏览型号AS6WA25616-55BI的Datasheet PDF文件第7页 
May 2001  
AS6WA25616  
®
3.0V to 3.6V 256K×16 Intelliwatt™ low-power CMOS SRAM with one chip enable  
• 1.5V data retention  
• Equal access and cycle times  
• Easy memory expansion with CS, OE inputs  
• Smallest footprint packages  
Features  
• AS6WA25616  
• Intelliwatt™ active power circuitry  
• Industrial and commercial temperature ranges available  
• Organization: 262,144 words × 16 bits  
• 3.0V to 3.6V at 55 ns  
- 48-ball FBGA  
- 400-mil 44-pin TSOP 2  
• ESD protection 2000 volts  
• Low power consumption: ACTIVE  
- 144 mW at 3.6V and 55 ns  
• Latch-up current 200 mA  
• Low power consumption: STANDBY  
Pin arrangement (top view)  
- 72 µW max at 3.6V  
Logic block diagram  
A0  
44-pin 400-mil TSOP 2  
A4  
A3  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A5  
2
A6  
A2  
3
A7  
V
V
A1  
A2  
A1  
4
OE  
CC  
A0  
5
UB  
256K × 16  
Array  
(4,194,304)  
A3  
CS  
6
LB  
SS  
I/O16  
I/O15  
I/O14  
I/O13  
I/O1  
I/O2  
I/O3  
I/O4  
7
A4  
8
A6  
9
A7  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
A8  
V
V
V
CC  
SS  
CC  
A12  
A13  
V
SS  
I/O5  
I/O6  
I/O7  
I/O8  
WE  
I/O12  
I/O11  
I/O10  
I/O9  
NC  
I/O1–I/O8  
I/O9–I/O16  
I/O  
Control circuit  
buffer  
A17  
A16  
A15  
A14  
A13  
A8  
Column decoder  
WE  
A9  
A10  
A11  
A12  
UB  
OE  
LB  
48-CSP Ball-Grid-Array Package  
CS  
1
2
3
4
5
6
A
B
LB  
OE  
A0  
A3  
A1  
A4  
A2  
CS  
NC  
I/O9 UB  
I/O1  
C
D
E
I/O10 I/O11 A5  
VSS I/O12 A17  
VCC I/O13 NC  
A6 I/O2 I/O3  
A7 I/O4 VCC  
A16 I/O5 VSS  
F
I/O15 I/O14 A14 A15 I/O6 I/O7  
G
H
I/O16 NC  
NC A8  
A12 A13  
A9  
WE I/O8  
NC  
A10 A11  
Selection guide  
VCC Range  
Power Dissipation  
Operating (ICC)  
Max (mA)  
2
Standby (ISB1  
Max (µA)  
20  
)
Min  
(V)  
Typ2  
(V)  
Max  
(V)  
Speed  
(ns)  
Product  
AS6WA25616  
3.0  
3.3  
3.6  
55  
5/25/01; v.1.2  
Alliance Semiconductor  
P. 1 of 9  
Copyright ©Alliance Semiconductor. All rights reserved.  

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