5秒后页面跳转
AS6VA25616-55TC PDF预览

AS6VA25616-55TC

更新时间: 2024-02-12 04:31:34
品牌 Logo 应用领域
ALSC 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 140K
描述
Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

AS6VA25616-55TC 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:55 nsJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:4194304 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:262144 words字数代码:256000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

AS6VA25616-55TC 数据手册

 浏览型号AS6VA25616-55TC的Datasheet PDF文件第2页浏览型号AS6VA25616-55TC的Datasheet PDF文件第3页浏览型号AS6VA25616-55TC的Datasheet PDF文件第4页浏览型号AS6VA25616-55TC的Datasheet PDF文件第5页浏览型号AS6VA25616-55TC的Datasheet PDF文件第6页浏览型号AS6VA25616-55TC的Datasheet PDF文件第7页 
May 2001  
AS6VA25616  
®
2.7V to 3.3V 256K × 16 Intelliwatt™ low-power CMOS SRAM with one chip enable  
• 1.5V data retention  
• Equal access and cycle times  
Features  
• AS6VA25616  
• Easy memory expansion with CS, OE inputs  
• Smallest footprint packages  
- 48-ball FBGA  
- 400-mil 44-pin TSOP 2  
• ESD protection 2000 volts  
• Latch-up current 200 mA  
• Intelliwatt™ active power circuitry  
• Industrial and commercial temperature ranges available  
• Organization: 262,144 words × 16 bits  
• 2.7V to 3.3V at 55 ns  
• Low power consumption: ACTIVE  
- 132 mW at 3.3V and 55 ns  
• Low power consumption: STANDBY  
- 66 µW max at 3.3V  
Logic block diagram  
Pin arrangement (top view)  
44-pin 400-mil TSOP 2  
A0  
V
V
A1  
A2  
A4  
A3  
1
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
A5  
CC  
2
A6  
256K × 16  
Array  
(4,194,304)  
A2  
3
A7  
A3  
SS  
A1  
4
OE  
A4  
A0  
5
UB  
A6  
CS  
6
LB  
A7  
I/O16  
I/O15  
I/O14  
I/O13  
I/O1  
I/O2  
I/O3  
I/O4  
7
A8  
8
A12  
A13  
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
V
V
V
CC  
SS  
CC  
I/O1–I/O8  
I/O9–I/O16  
I/O  
Control circuit  
V
SS  
buffer  
I/O5  
I/O6  
I/O7  
I/O8  
WE  
I/O12  
I/O11  
I/O10  
I/O9  
NC  
Column decoder  
WE  
A17  
A16  
A15  
A14  
A13  
A8  
A9  
A10  
UB  
OE  
LB  
A11  
A12  
CS  
48-CSP Ball-Grid-Array Package  
1
2
3
4
5
6
A
B
LB  
OE  
A0  
A3  
A1  
A4  
A2  
CS  
NC  
I/O9 UB  
I/O1  
C
D
E
I/O10 I/O11 A5  
VSS I/O12 A17  
VCC I/O13 NC  
A6 I/O2 I/O3  
A7 I/O4 VCC  
A16 I/O5 VSS  
F
I/O15 I/O14 A14 A15 I/O6 I/O7  
G
H
I/O16 NC  
NC A8  
A12 A13  
A9  
WE I/O8  
NC  
A10 A11  
Selection guide  
V
CC Range  
Power Dissipation  
Operating (ICC)  
Max (mA)  
2
Standby (ISB1  
Max (µA)  
20  
)
Min  
(V)  
Typ2  
(V)  
Max  
(V)  
Speed  
(ns)  
Product  
AS6VA25616  
2.7  
3.0  
3.3  
55  
5/25/01; v.1.2  
Alliance Semiconductor  
P. 1 of 9  
Copyright © Alliance Semiconductor. All rights reserved.  

与AS6VA25616-55TC相关器件

型号 品牌 描述 获取价格 数据表
AS6VA25616-BC ALSC 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

获取价格

AS6VA25616-BI ALSC 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

获取价格

AS6VA25616-TC ALSC 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

获取价格

AS6VA25616-TI ALSC 2.7V to 3.3V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable

获取价格

AS6VA5128 ETC 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM

获取价格

AS6VA5128-BC ETC 2.7V to 3.3V 512K X 8 Intelliwatt low-power CMOS SRAM

获取价格