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APTGT150SK60T1G PDF预览

APTGT150SK60T1G

更新时间: 2024-11-24 06:37:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体电源电路晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
5页 275K
描述
Buck chopper Trench + Field Stop IGBT® Power Module

APTGT150SK60T1G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:FLANGE MOUNT, R-XUFM-T12
针数:12Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.66
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):225 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODE AND THERMISTOR门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-T12JESD-609代码:e1
湿度敏感等级:1元件数量:1
端子数量:12最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):480 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:THROUGH-HOLE端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):370 ns
标称接通时间 (ton):180 nsVCEsat-Max:1.9 V
Base Number Matches:1

APTGT150SK60T1G 数据手册

 浏览型号APTGT150SK60T1G的Datasheet PDF文件第2页浏览型号APTGT150SK60T1G的Datasheet PDF文件第3页浏览型号APTGT150SK60T1G的Datasheet PDF文件第4页浏览型号APTGT150SK60T1G的Datasheet PDF文件第5页 
APTGT150SK60T1G  
Buck chopper  
Trench + Field Stop IGBT®  
Power Module  
VCES = 600V  
IC = 150A* @ Tc = 80°C  
Application  
5
6
11  
AC and DC motor control  
Switched Mode Power Supplies  
Q1  
CR1  
Features  
7
8
Trench + Field Stop IGBT® Technology  
3
4
NTC  
-
-
-
-
-
-
-
Low voltage drop  
Low tail current  
CR2  
1
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
RBSOA and SCSOA rated  
Very low stray inductance  
2
12  
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
RoHS Compliant  
Pins 1/2 ; 3/4 ; 5/6 must be shorted together  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
600  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
225 *  
150 *  
350  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
±20  
480  
300A @ 550V  
V
W
TC = 25°C  
Tj = 150°C  
RBSOA Reverse Bias Safe Operating Area  
Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater  
than 30°C for the connectors.  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 – 5  
www.microsemi.com  

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