是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-XUFM-T12 |
针数: | 12 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.66 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 225 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE AND THERMISTOR | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-T12 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 12 | 最高工作温度: | 175 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 480 W |
认证状态: | Not Qualified | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | NO | 端子面层: | TIN SILVER COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 370 ns |
标称接通时间 (ton): | 180 ns | VCEsat-Max: | 1.9 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGT150SK60T1G-Module | MICROCHIP |
获取价格 |
Configuration: Buck chopperVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 150Silicon type | |
APTGT150SK60T3AG | MICROSEMI |
获取价格 |
Buck chopper Trench + Field Stop IGBT Power Module | |
APTGT150SK60TG | MICROSEMI |
获取价格 |
Buck chopper Trench + Field Stop IGBT Power Module | |
APTGT150TA60P | ADPOW |
获取价格 |
Triple phase leg Trench + Field Stop IGBT Power Module | |
APTGT150TA60PG | MICROSEMI |
获取价格 |
Triple phase leg Trench + Field Stop IGBT Power Module | |
APTGT150TA60PG-Module | MICROCHIP |
获取价格 |
Configuration: Triple Phase legVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 150Silicon | |
APTGT150TDU60P | ADPOW |
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Triple Dual Common Source Trench + Field Stop IGBT Power Module | |
APTGT150TDU60PG | MICROSEMI |
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Triple Dual Common Source Trench + Field Stop IGBT Power Module | |
APTGT150TDU60PG-Module | MICROCHIP |
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Configuration: Triple Dual common sourceVCES (V): 600VCESat (V): 1.5Current (A) Tc=80C: 15 | |
APTGT150TL60G | MICROSEMI |
获取价格 |
Three level inverter Trench + Field Stop IGBT Power Module |