Datasheet > APTGLQ300H65G-Module

APTGLQ300H65G-Module

更新时间： 2024-11-25 14:52:59

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	591K
描述
IGBT 4 fast Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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中文翻译

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数据手册

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APTGLQ300H65G-Module 数据手册

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APTGLQ300H65G

Full bridge

High speed Trench + Field Stop IGBT4

Power module

V_CES= 650V

I_C= 300A @ Tc = 60°C

Application

VBUS

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

OUT1 OUT2

Features

•

High speed Trench + Field Stop IGBT 4 Technology

Low voltage drop

Low leakage current

Low switching losses

Soft recovery parallel diodes

Low diode VF

RBSOA and SCSOA rated

0/VBUS

•

Kelvin source for easy drive

Very low stray inductance

M5 power connectors

High level of integration

Benefits

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

RoHS Compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Max ratings

650

Unit

V_CES

Collector - Emitter Voltage

T_C= 25°C

T_C= 60°C

T_C= 25°C

385

300

750

±20

I_C

Continuous Collector Current

I_CM

V_GE

Pulsed Collector Current

Gate – Emitter Voltage

T_C= 25°C

T_j= 125°C

P_D

Maximum Power Dissipation

1000

RBSOA Reverse Bias Safe Operating Area

600A @ 600V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

1 – 6

www.microsemi.com

12 3 4 5 6

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