Datasheet > APTGLQ40HR120CT3G-Module

APTGLQ40HR120CT3G-Module

更新时间： 2024-11-25 14:50:55

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
9页	736K
描述
IGBT 4 fast Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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数据手册

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APTGLQ40HR120CT3G-Module 数据手册

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APTGLQ40HR120CT3G

High speed Trench & Field Stop IGBT4 (Q1, Q2):

Phase Leg & Dual Common Emitter

Power Module

_CES= 1200V ; I_C= 40A @ Tc = 80°C

Trench & Field Stop IGBT3 (Q3, Q4):

_CES= 600V ; I_C= 50A @ Tc = 80°C

Application

•

Solar converter

Uninterruptible Power Supplies

Features

•

Q1, Q2 High speed Trench + field Stop IGBT4

- Low voltage drop

- Low tail current

•

Q3, Q4 Trench + field Stop IGBT3

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

SiC Schottky Diode (D3, D4)

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF

•

Kelvin emitter for easy drive

Very low stray inductance

High level of integration

Internal thermistor for temperature monitoring

Benefits

•

Stable temperature behavior

Very rugged

Solderable terminals for easy PCB mounting

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

Low profile

All multiple inputs and outputs must be shorted together

10/11 ; 23/24 ; 2/3 ; …

RoHS Compliant

All ratings @ T_j= 25°C unless otherwise specified

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

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