Datasheet > APTGLQ50H65T1G-Module

APTGLQ50H65T1G-Module

更新时间： 2024-11-25 14:53:39

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	472K
描述
IGBT 3 fastLow voltage dropLow leakage currentLow switching lossesKelvin emitter for easy driveLow

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中文翻译

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数据手册

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APTGLQ50H65T1G-Module 数据手册

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APTGLQ50H65T1G

Full bridge

High speed Trench + Field Stop IGBT4

Power Module

V_CES= 650V

I_C= 50A @ Tc = 60°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

CR1

CR3

Features

•

High speed Trench + Field Stop IGBT 4 Technology

CR2 CR4

Low voltage drop

Low leakage current

Low switching losses

•

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits

NTC

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for easy

PCB mounting

•

Low profile

RoHS compliant

Pins 3/4 must be shorted together

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

650

140

±20

175

T_C= 25°C

T_C= 60°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

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