生命周期: | Transferred | 包装说明: | FLANGE MOUNT, R-XUFM-X35 |
Reach Compliance Code: | unknown | 风险等级: | 5.63 |
Is Samacsys: | N | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 100 A | 集电极-发射极最大电压: | 1700 V |
配置: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | JESD-30 代码: | R-XUFM-X35 |
元件数量: | 6 | 端子数量: | 35 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 930 ns | 标称接通时间 (ton): | 200 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APTGS50X170TE3G | MICROSEMI |
获取价格 |
Insulated Gate Bipolar Transistor, 100A I(C), 1700V V(BR)CES, N-Channel, MODULE-35 | |
APTGS75X170E3 | ADPOW |
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3 Phase bridge NPT IGBT Power Module | |
APTGS75X170TE3 | ADPOW |
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3 Phase bridge NPT IGBT Power Module | |
APTGT100A120D1 | ADPOW |
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Phase leg Trench IGBT Power Module | |
APTGT100A120D1G | MICROSEMI |
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Phase Leg Trench + Field Stop IGBT Power Module | |
APTGT100A120T | ADPOW |
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Phase leg Fast Trench + Field Stop IGBT Power Module | |
APTGT100A120T3AG | MICROSEMI |
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Phase leg Trench + Field Stop IGBT Power Module | |
APTGT100A120T3AG-Module | MICROCHIP |
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Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 100Silicon type: | |
APTGT100A120TG | MICROSEMI |
获取价格 |
Phase leg Fast Trench + Field Stop IGBT Power Module | |
APTGT100A120TG-Module | MICROCHIP |
获取价格 |
Configuration: Phase legVCES (V): 1200VCESat (V): 1.7Current (A) Tc=80C: 100Silicon type: |