Datasheet > APTGLQ75H120T3G-Module

APTGLQ75H120T3G-Module

更新时间： 2024-11-25 14:54:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	388K
描述
IGBT 4 fast Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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中文翻译

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数据手册

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APTGLQ75H120T3G-Module 数据手册

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APTGLQ75H120T3G

Full bridge

High speed Trench + Field Stop IGBT4

Power Module

V_CES= 1200V

I_C= 75A @ Tc = 80°C

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



High speed Trench + Field Stop IGBT 4

Low voltage drop

Low leakage current

Low switching losses



Kelvin emitter for easy drive

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for easy

PCB mounting



Low profile

Easy paralleling due to positive TC of VCEsat

Each leg can be easily paralleled to achieve a phase leg

of twice the current capability



RoHS compliant

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

1200

130

Unit

V_CES

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

250

±20

385

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

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