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APTGT100A120T PDF预览

APTGT100A120T

更新时间: 2024-11-24 03:27:51
品牌 Logo 应用领域
ADPOW 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
5页 279K
描述
Phase leg Fast Trench + Field Stop IGBT Power Module

APTGT100A120T 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-XUFM-X12
Reach Compliance Code:unknown风险等级:5.63
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):140 A集电极-发射极最大电压:1200 V
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTORJESD-30 代码:R-XUFM-X12
元件数量:2端子数量:12
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):610 ns标称接通时间 (ton):340 ns
Base Number Matches:1

APTGT100A120T 数据手册

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APTGT100A120T  
Phase leg  
Fast Trench + Field Stop IGBT®  
Power Module  
VCES = 1200V  
IC = 100A @ Tc = 80°C  
Application  
VBUS  
NTC2  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
G1  
E1  
Features  
Fast Trench + Field Stop IGBT® Technology  
OUT  
-
-
-
-
-
-
-
-
Low voltage drop  
Q2  
Low tail current  
Switching frequency up to 20 kHz  
Soft recovery parallel diodes  
Low diode VF  
G2  
E2  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
0/VBUS  
NTC1  
Kelvin emitter for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
Lead frames for power connections  
High level of integration  
Internal thermistor for temperature monitoring  
G2  
Benefits  
OUT  
OUT  
E2  
Stable temperature behavior  
Very rugged  
VBUS  
0/VBUS  
Solderable terminals for easy PCB mounting  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
E1  
G1  
E2  
G2  
NTC2  
NTC1  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
140  
100  
200  
±20  
480  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
TC = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 125°C 200A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
1 - 5  
APT website – http://www.advancedpower.com  

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