Datasheet > APTGS15X120RTP2G

APTGS15X120RTP2G

更新时间： 2024-11-24 20:48:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		栅
页数	文件大小	规格书
4页	247K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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技术参数
数据手册

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APTGS15X120RTP2G 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

APTGS15X120RTP2G 数据手册

APTGS15X120RTP2

APTGS15X120BTP2

Input rectifier bridge +

Brake + 3 Phase Bridge

NPT IGBT Power Module

V_CES= 1200V

I_C= 15A @ Tc = 80°C

Application

•

Features

•

AC Motor control

Non Punch Through (NPT) Low Loss IGBT^®

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

•

Very low stray inductance

High level of integration

Internal thermistor for temperature monitoring

Benefits

APTGS15X120RTP2: Without Brake (Pin 7 & 14 not connected)

•

Low conduction losses

Stable temperature behavior

Very rugged

Solderable terminals for easy PCB mounting

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive TC of VCEsat

Low profile

20 19 18 17 16 15

13 12 11 10

All ratings @ T_j= 25°C unless otherwise specified

1. Absolute maximum ratings

Diode rectifier Absolute maximum ratings

Symbol

V_RRM

I_D

Parameter

Max ratings

1600

Unit

Repetitive Peak Reverse Voltage

DC Forward Current

T_C= 80°C

T_j= 25°C

T_j= 150°C

300

230

I_FSM

Surge Forward Current

t_p= 10ms

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

1 - 4

APT website – http://www.advancedpower.com

12 3 4

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