Datasheet > APTGLQ30H65T3G-Module

APTGLQ30H65T3G-Module

更新时间： 2024-11-25 14:55:07

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	554K
描述
IGBT 3 fastLow voltage dropLow leakage currentLow switching lossesKelvin emitter for easy driveLow

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中文翻译

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数据手册

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APTGLQ30H65T3G-Module 数据手册

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APTGLQ30H65T3G

Full bridge

High speed Trench + Field Stop IGBT4

Power Module

V_CES= 650V

I_C= 30A @ Tc = 50°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

High speed Trench + Field Stop IGBT 4 Technology

Low voltage drop

Low leakage current

Low switching losses

•

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals for both power and signal for easy

PCB mounting

•

Low profile

Easy paralleling due to positive TC of VCEsat

Each leg can be easily paralleled to achieve a phase leg

of twice the current capability

•

RoHS compliant

All multiple inputs and outputs must be shorted

together ; Example: 13/14 ; 29/30 ; 22/23 …

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

650

±20

T_C= 25°C

T_C= 50°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Power Dissipation

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

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