Datasheet > APTGLQ40H120T1G-Module

APTGLQ40H120T1G-Module

更新时间： 2024-11-25 14:52:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	535K
描述
IGBT 4 fast Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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中文翻译

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数据手册

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APTGLQ40H120T1G-Module 数据手册

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APTGLQ40H120T1G

Full bridge

High speed Trench + Field Stop IGBT4

Power Module

V_CES= 1200V

I_C= 40A @ Tc = 80°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

CR1

CR3

Features

•

High speed Trench + Field Stop IGBT 4 Technology

CR2 CR4

Low voltage drop

Low leakage current

Low switching losses

RBSOA and SCSOA rated

•

Very low stray inductance

High level of integration

Internal thermistor for temperature monitoring

NTC

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for easy

PCB mounting

•

Low profile

RoHS compliant

Pins 3/4 must be shorted together

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

160

±20

250

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

RBSOA Reverse Bias Safe Operating Area

T_j= 150°C

80A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

1 - 6

www.microsemi.com

12 3 4 5 6

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