Datasheet > APTGLQ200HR120G-Module

APTGLQ200HR120G-Module

更新时间： 2024-11-25 14:54:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
10页	579K
描述
IGBT 4 fast Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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中文翻译

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APTGLQ200HR120G-Module 数据手册

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APTGLQ200HR120G

Fast Trench & Field Stop IGBT4 (Q1, Q2):

V_CES= 1200V ; I_C= 200A @ Tc = 80°C

Phase Leg & Dual Common Emitter

Power Module

Trench & Field Stop IGBT3 (Q3, Q4):

V_CES= 600V ; I_C= 100A @ Tc = 80°C

V POS

Application

•

Uninterruptible Power Supplies

CR1

V OUT

Features

• Q1, Q2 (High speed Trench & Field Stop IGBT4)

• Q3, Q4 (Trench & Field Stop IGBT3)

- Low voltage drop

CR3

CR2

Low tail current

Low leakage current

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Very low stray inductance

High level of integration

V NEG

CR4

Benefits

V GND

•

Stable temperature behavior

Very rugged

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Easy paralleling due to positive T_Cof V_CEsat

Low profile

RoHS Compliant

All ratings @ T_j= 25°C unless otherwise specified

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.

See application note APT0502 on www.microsemi.com

1 - 10

www.microsemi.com

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