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APTGF90H60TG PDF预览

APTGF90H60TG

更新时间: 2024-11-21 04:32:51
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管电动机控制双极性晶体管局域网
页数 文件大小 规格书
6页 289K
描述
Full - Bridge NPT IGBT Power Module

APTGF90H60TG 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:MODULE
包装说明:FLANGE MOUNT, R-XUFM-X14针数:14
Reach Compliance Code:compliant风险等级:5.19
外壳连接:ISOLATED最大集电极电流 (IC):110 A
集电极-发射极最大电压:600 V配置:BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
JESD-30 代码:R-XUFM-X14JESD-609代码:e1
湿度敏感等级:1元件数量:4
端子数量:14最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:TIN SILVER COPPER
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):210 ns
标称接通时间 (ton):51 nsBase Number Matches:1

APTGF90H60TG 数据手册

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APTGF90H60TG  
VCES = 600V  
Full - Bridge  
IC = 90A @ Tc = 80°C  
NPT IGBT Power Module  
Application  
Welding converters  
VBUS  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q3  
Q1  
Features  
G3  
E3  
G1  
E1  
Non Punch Through (NPT) Fast IGBT®  
-
-
-
-
-
-
-
-
Low voltage drop  
OUT1  
OUT2  
Low tail current  
Switching frequency up to 100 kHz  
Soft recovery parallel diodes  
Low diode VF  
Q2  
Q4  
G4  
E4  
G2  
E2  
Low leakage current  
Avalanche energy rated  
RBSOA and SCSOA rated  
Kelvin emitter for easy drive  
Very low stray inductance  
NTC1  
NTC2  
0/VBU S  
-
-
Symmetrical design  
Lead frames for power connections  
Internal thermistor for temperature monitoring  
High level of integration  
Benefits  
Outstanding performance at high frequency  
operation  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Easy paralleling due to positive TC of VCEsat  
Low profile  
RoHS compliant  
G3  
G4  
E4  
OUT2  
OUT1  
E3  
VBUS  
0/VBUS  
E1  
G1  
E2  
G2  
NTC2  
NTC1  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
600  
110  
90  
315  
±20  
416  
V
Tc = 25°C  
Tc = 80°C  
Tc = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
PD  
Pulsed Collector Current  
Gate – Emitter Voltage  
Maximum Power Dissipation  
V
W
Tc = 25°C  
RBSOA Reverse Bias Safe Operating Area  
Tj = 150°C  
200A @ 600V  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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