Datasheet > APTGL120DA120T1G

APTGL120DA120T1G

更新时间： 2024-11-25 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		电源电路双极性晶体管
页数	文件大小	规格书
5页	214K
描述
Boost chopper Trench + Field Stop IGBT4 Power module

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中文翻译

获取价格

数据手册

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APTGL120DA120T1G 数据手册

APTGL120DA120T1G

Boost chopper

Trench + Field Stop IGBT4

Power module

V_CES= 1200V

I_C= 120A @ Tc = 80°C

Application

•

AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

CR1

Features

•

Trench + Field Stop IGBT 4 Technology

NTC

Low voltage drop

Low leakage current

Low switching losses

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

Symmetrical design

CR2

•

Kelvin emitter for easy drive

Very low stray inductance

High level of integration

Internal thermistor for temperature monitoring

Benefits

•

Outstanding performance at high frequency

operation

•

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

RoHS Compliant

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

1200

140

Unit

V_CES

Collector - Emitter Breakdown Voltage

T_c= 25°C

T_c= 80°C

T_c= 25°C

I_C

Continuous Collector Current

120

200

±20

517

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_c= 25°C

T_j= 150°C

RBSOA Reverse Bias Safe Operating Area

200A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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