Datasheet > APTGL40H120T1G

APTGL40H120T1G

更新时间： 2024-11-24 06:37:27

品牌	Logo	应用领域
美高森美 - MICROSEMI		电源电路双极性晶体管
页数	文件大小	规格书
5页	207K
描述
Full bridge Trench + Field Stop IGBT4 Power Module

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中文翻译

获取价格

数据手册

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APTGL40H120T1G 数据手册

APTGL40H120T1G

Full bridge

Trench + Field Stop IGBT4

Power Module

V_CES= 1200V

I_C= 40A @ Tc = 80°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

CR1

CR3

Features

•

Trench + Field Stop IGBT 4 Technology

Low voltage drop

CR2 CR4

Low leakage current

Low switching losses

Low tail current

Soft recovery parallel diodes

Low diode VF

RBSOA and SCSOA rated

•

Kelvin emitter for easy drive

Very low stray inductance

High level of integration

NTC

Internal thermistor for temperature monitoring

Benefits

•

Outstanding performance at high frequency

operation

•

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal

for easy PCB mounting

•

Low profile

RoHS compliant

Pins 3/4 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_CES

Collector - Emitter Breakdown Voltage

1200

±20

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

Pulsed Collector Current

Gate – Emitter Voltage

T_C= 25°C

T_j= 150°C

P_D

Maximum Power Dissipation

220

RBSOA Reverse Bias Safe Operating Area

70A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

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