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APTGL60A120T1G PDF预览

APTGL60A120T1G

更新时间: 2024-11-20 06:37:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 电源电路双极性晶体管
页数 文件大小 规格书
5页 209K
描述
Phase leg Trench + Field Stop IGBT4 Power module

APTGL60A120T1G 数据手册

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APTGL60A120T1G  
Phase leg  
Trench + Field Stop IGBT4  
Power module  
VCES = 1200V  
IC = 60A @ Tc = 80°C  
Application  
5
6
11  
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
CR1  
CR2  
7
8
Features  
Trench + Field Stop IGBT 4 Technology  
3
4
NTC  
-
-
-
-
-
-
-
-
Low voltage drop  
Low leakage current  
Low switching losses  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
RBSOA and SCSOA rated  
Symmetrical design  
Q2  
9
10  
12  
1
2
Kelvin emitter for easy drive  
Very low stray inductance  
High level of integration  
Internal thermistor for temperature monitoring  
Benefits  
Outstanding performance at high frequency  
operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
Low profile  
RoHS Compliant  
Pins 1/2 ; 3/4 ; 5/6 must be shorted together  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
80  
60  
100  
±20  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
Pulsed Collector Current  
Gate – Emitter Voltage  
V
PD  
Maximum Power Dissipation  
TC = 25°C  
Tj = 150°C  
280  
W
RBSOA Reverse Bias Safe Operating Area  
100A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  

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