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APTGL60H120T3G PDF预览

APTGL60H120T3G

更新时间： 2024-11-20 06:37:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 电源电路双极性晶体管
页数 文件大小 规格书
5页 199K
描述
Full bridge Trench + Field Stop IGBT4 Power module

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中文翻译

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APTGL60H120T3G 数据手册

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APTGL60H120T3G  
Full bridge  
Trench + Field Stop IGBT4  
Power module  
VCES = 1200V  
IC = 60A @ Tc = 80°C  
Application  
13 14  
•
•
•
•
Welding converters  
Switched Mode Power Supplies  
Uninterruptible Power Supplies  
Motor control  
Q1  
Q3  
CR1  
22  
CR3  
11  
10  
18  
19  
Features  
7
8
•
Trench + Field Stop IGBT 4 Technology  
-
-
-
-
-
-
-
-
Low voltage drop  
23  
Low leakage current  
Low switching losses  
Soft recovery parallel diodes  
Low diode VF  
Low leakage current  
RBSOA and SCSOA rated  
Symmetrical design  
Q2  
29  
Q4  
CR2  
CR4  
26  
27  
4
3
30  
31  
R1  
32  
•
•
•
•
Kelvin emitter for easy drive  
Very low stray inductance  
High level of integration  
15  
16  
Internal thermistor for temperature monitoring  
28 27 26 25  
23 22  
20 19 18  
Benefits  
29  
30  
16  
15  
•
Outstanding performance at high frequency  
operation  
•
•
•
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Solderable terminals both for power and signal for  
easy PCB mounting  
31  
32  
14  
13  
•
•
•
Low profile  
2
3
4
7
8
10 11  
12  
Easy paralleling due to positive TC of VCEsat  
Each leg can be easily paralleled to achieve a phase  
leg of twice the current capability  
RoHS compliant  
All multiple inputs and outputs must be shorted together  
Example: 13/14 ; 29/30 ; 22/23 …  
•
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
80  
60  
100  
±20  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
Pulsed Collector Current  
Gate – Emitter Voltage  
V
PD  
Maximum Power Dissipation  
TC = 25°C  
Tj = 150°C  
280  
W
RBSOA Reverse Bias Safe Operating Area  
100A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  
12345

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