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APTGL60TL120T3G PDF预览

APTGL60TL120T3G

更新时间: 2024-11-24 06:37:31
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
6页 202K
描述
Three level inverter Trench + Field Stop IGBT4

APTGL60TL120T3G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, SP3, 25 PIN针数:25
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.73Is Samacsys:N
外壳连接:ISOLATED最大集电极电流 (IC):80 A
集电极-发射极最大电压:1200 V配置:COMPLEX
门极-发射极最大电压:20 VJESD-30 代码:R-XUFM-X16
元件数量:4端子数量:16
最高工作温度:175 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):280 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):370 ns
标称接通时间 (ton):80 nsVCEsat-Max:2.2 V
Base Number Matches:1

APTGL60TL120T3G 数据手册

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APTGL60TL120T3G  
VCES = 1200V  
IC = 60A @ Tc = 80°C  
Three level inverter  
Trench + Field Stop IGBT4  
Application  
Solar converter  
Uninterruptible Power Supplies  
Features  
Trench + Field Stop IGBT 4 Technology  
-
-
-
Low voltage drop  
Low leakage current  
Low switching losses  
Kelvin emitter for easy drive  
Very low stray inductance  
High level of integration  
Internal thermistor for temperature monitoring  
Benefits  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
28 27 26 25  
23 22  
20 19 18  
29  
30  
16  
15  
RoHS Compliant  
31  
32  
14  
13  
2
3
4
7
8
10 11  
12  
All multiple inputs and outputs must be shorted together  
Example: 10/11/12 ; 7/8 …  
Q1 to Q4 Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VCES  
Collector - Emitter Breakdown Voltage  
1200  
80  
60  
100  
±20  
V
TC = 25°C  
TC = 80°C  
TC = 25°C  
IC  
Continuous Collector Current  
A
ICM  
VGE  
Pulsed Collector Current  
Gate – Emitter Voltage  
V
PD  
Maximum Power Dissipation  
TC = 25°C  
Tj = 150°C  
280  
W
RBSOA Reverse Bias Safe Operating Area  
100A @ 1100V  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
See application note APT0502 on www.microsemi.com  
1 - 6  
www.microsemi.com  

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