Datasheet > APTGL60DDA120T3G-Module

APTGL60DDA120T3G-Module

更新时间： 2024-11-25 14:55:47

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	318K
描述
IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTGL60DDA120T3G-Module 数据手册

浏览型号APTGL60DDA120T3G-Module的Datasheet PDF文件第2页

浏览型号APTGL60DDA120T3G-Module的Datasheet PDF文件第3页

浏览型号APTGL60DDA120T3G-Module的Datasheet PDF文件第4页

APTGL60DDA120T3G

Dual Boost chopper

Trench + Field Stop IGBT4

Power module

V_CES= 1200V

I_C= 60A @ Tc = 80°C

Application

13 14



AC and DC motor control

Switched Mode Power Supplies

Power Factor Correction

CR1

CR2

Features



Trench + Field Stop IGBT 4

Low voltage drop

Low leakage current

Low switching losses

Low leakage current

RBSOA and SCSOA rated



Kelvin emitter for easy drive

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits



Outstanding performance at high frequency

operation



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

Easy paralleling due to positive TC of VCEsat

Each leg can be easily paralleled to achieve a

single boost of twice the current capability

RoHS c-ompliant



All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per IGBT)

Symbol

Parameter

Collector - Emitter Voltage

Max ratings

Unit

V_CES

1200

100

±20

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

Pulsed Collector Current

Gate – Emitter Voltage

P_D

Power Dissipation

T_C= 25°C

T_j= 150°C

280

RBSOA Reverse Bias Safe Operating Area

100A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 6

www.microsemi.com

12 3 4 5 6

中文翻译

下载PDF

与APTGL60DDA120T3G-Module相关器件

型号	品牌	获取价格	描述	数据表
APTGL60DH120T3G	MICROSEMI	获取价格	Asymmetrical - Bridge Trench + Field Stop IGBT4 Power module
APTGL60DSK120T3G	MICROSEMI	获取价格	Dual Buck chopper Trench + Field Stop IGBT4 Power Module
APTGL60H120T3G	MICROSEMI	获取价格	Full bridge Trench + Field Stop IGBT4 Power module
APTGL60H120T3G-Module	MICROCHIP	获取价格	IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy dri
APTGL60TL120T3G	MICROSEMI	获取价格	Three level inverter Trench + Field Stop IGBT4
APTGL60TL120T3G-Module	MICROCHIP	获取价格	IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy dri
APTGL700DA120D3G-Module	MICROCHIP	获取价格	IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy dri
APTGL700SK120D3G-Module	MICROCHIP	获取价格	IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy dri
APTGL700U120D4G	MICROSEMI	获取价格	Single switch Trench + Field Stop IGBT4 Power Module
APTGL700U120D4G_10	MICROSEMI	获取价格	Single switch Trench + Field Stop IGBT4 Power Module

与APTGL60DDA120T3G-Module相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

38
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

30
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

58
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

54

产品中心

服务支持

精选活动

关于我们

帮助中心

APTGL60DDA120T3G-Module

APTGL60DDA120T3G-Module 数据手册

与APTGL60DDA120T3G-Module相关器件

与APTGL60DDA120T3G-Module相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

APTGL60DDA120T3G-Module

APTGL60DDA120T3G-Module 数据手册

与APTGL60DDA120T3G-Module相关器件

与APTGL60DDA120T3G-Module相关文章

您还可以找

您在本页遇到什么问题？