Datasheet > APTGL475U120DAG-Module

APTGL475U120DAG-Module

更新时间： 2024-11-21 14:53:35

品牌	Logo	应用领域
美国微芯 - MICROCHIP		双极性晶体管
页数	文件大小	规格书
6页	438K
描述
IGBT 4 Very Low voltage dropLow tail currentLow leakage currentKelvin emitter for easy driveLow st

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中文翻译

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数据手册

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APTGL475U120DAG-Module 数据手册

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APTGL475U120DAG

Single switch

with Series diode

Trench + Field Stop IGBT4

V_CES= 1200V

I_C= 475A @ Tc = 100°C

Application



Zero Current Switching resonant mode

Features



Trench + Field Stop IGBT 4 Technology

Low voltage drop

Low leakage current

Low switching losses



Kelvin source for easy drive

Very low stray inductance

Symmetrical design

M5 power connectors



High level of integration

AlN substrate for improved thermal performance

Benefits



Outstanding performance at high frequency

operation



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Low profile

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

1200

610

Unit

V_CES

Collector - Emitter Breakdown Voltage

T_c= 25°C

T_c= 100°C

T_c= 25°C

I_C

Continuous Collector Current

475

800

±20

2307

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

T_c= 25°C

RBSOA Reverse Bias Safe Operating Area

T_j= 150°C 800A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 6

www.microsemi.com

12 3 4 5 6

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